生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.82 | 其他特性: | DIFFUSED BALLAST RESISTORS |
外壳连接: | BASE | 最大集电极电流 (IC): | 8 A |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
最高频带: | L BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 最小功率增益 (Gp): | 7 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRA1600-6 | MOTOROLA |
获取价格 |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN | |
MRA1720-2 | MOTOROLA |
获取价格 |
L BAND, Si, NPN, RF POWER TRANSISTOR | |
MRA1720-20 | MOTOROLA |
获取价格 |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN | |
MRA1720-5 | MOTOROLA |
获取价格 |
L BAND, Si, NPN, RF POWER TRANSISTOR | |
MRA1720-9 | MOTOROLA |
获取价格 |
L BAND, Si, NPN, RF POWER TRANSISTOR | |
MRA1CHP | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semi | |
MRA1CHP-1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semi | |
MRA1CHP-2 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semi | |
MRA206 | NKK |
获取价格 |
Half-Inch Diameter Process Sealed Rotaries | |
MRA206-A | NKK |
获取价格 |
Half-Inch Diameter Process Sealed Rotaries |