Datasheet > MP6M63

MP6M63

更新时间： 2024-11-24 09:25:39

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罗姆 - ROHM		/
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2页	146K
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MP6M63 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	最大漏极电流 (Abs) (ID)：	5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Copper (Sn/Cu)	Base Number Matches：	1

MP6M63 数据手册

Compact (4540 size), High Power (2.0W) Dual MOSFETs

MP6K/MP6M Series

●Description

●Dimensions (Unit: mm)

4.5

1.0

The MP6K and MP6M series of Dual MOSFETs are available in a

compact 4540 sized package featuring the same package power as

the conventional SOP8, but in a form factor 40% smaller in area

and 40% thinner, making them ideal for compact devices.

(6)

(5)

(4)

(1)

(2)

(3)

0.4

0.3

●Features

1.5

1) Compact, high power MPT6 package (4.5×4.0×1.0mm, 2.0W)

2) New ultra-miniature process technology ensures low ON-resistance

3) Large rated current (I_D=6A Max.: MP6K62)

3.0

0.6

1.45

●Applications

Car navigation, portable DVD players, printers, notebook PCs,

gaming consoles, and other thin, compact devices requiring power

switches and/or motor drivers

●Absolute Maximum Ratings (Ta=25°C)

Part No.

MP6K62

Parameter

Symbol

Unit

MP6K61

MP6M63

Tr1:Nch

It is the same ratings for the Tr1, Tr2

Tr2:Pch

-30

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

-20

±5.0

±20

1.6

±6.0

±24

1.6

±5.0

±20

1.6

±4.5

±18

-1.6

Drain Current

∗1

Pulsed

I_DP

Source Current

(Internal Diode)

I_S

∗1

Pulsed

I_SP

-18

P_D^∗2

2.0

1.4

W / TOTAL

Total Permissible Loss

1.4

W / ELEMENT

Channel Block Temperature

Storage Temperature Range

Tch

150

°C

Tstg

-55 to 150

∗1 Pw ≦ 10µs, Duty cycle ≦ 1%

∗2 Mounted on a ceramic board

The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.

The application circuit examples, information, and various data pertaining to the use of the products presented in this documentation are provided for reference purposes only.

Please note that ROHM cannot bear any responsibility regarding any problems relating to industrial property rights resulting from their use thereof.

The products listed in this catalog are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices,

electrical appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical

instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

Current specifications in effect of 1st. April 2007.

Excellence in Electronics

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21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto

615-8585, Japan

TEL: +81-75-311-2121 FAX: +81-75-315-0172

URL http: // www. rohm. com

Catalog No.49G5534E 04.2007 ROHM

C PR

○

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与MP6M63相关器件

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MP6-NNE-NQE-00	ARTESYN	获取价格	MP CONFIGURABLE POWER SUPPLY
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MP6T11TR	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, MPT6, 6 P
MP6T12	ROHM	获取价格	Midium Power Transistors (-50V / -1A)
MP6T12TR	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MPT6, 6 P
MP6T13	ROHM	获取价格	Midium Power Transistors (-50V / -3A)
MP6T13TR	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 6

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