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MP6T1 PDF预览

MP6T1

更新时间: 2024-11-23 05:49:51
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 106K
描述
Medium Power Transistor (−32V, −1A)

MP6T1 数据手册

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MP6T1  
Transistors  
Medium Power Transistor (32V, 1A)  
MP6T1  
z
(Unit : mm)  
Dimensions  
zApplications  
Low frequency amplifier  
MPT6  
(6)  
(5)  
(2)  
(4)  
zFeatures  
1) Low VCE(sat), VCE(sat) = 0.2V(Typ.)  
(IC /IB = 500mA / 50mA)  
2) Contain two 2SB1132-dies in a package.  
(1)  
(3)  
zStructure  
PNP silicon epitaxial planar transistor  
z
z
Inner circuit  
Packaging specifications  
Package  
Taping  
TR  
(6)  
(5)  
(4)  
(1) Emitter <Tr1>  
(2) Base <Tr1>  
Type  
Code  
(3) Collector <Tr2>  
(4) Emitter <Tr2>  
(5) Base <Tr2>  
Basic ordering unit(pieces)  
1000  
MP6T1  
<Tr2>  
<Tr1>  
(6) Collector <Tr1>  
(1)  
(2)  
(3)  
z
(Ta=25 C)  
Absolute maximum ratings  
°
<Tr1, Tr2>  
Parameter  
Symbol  
VCBO  
Limits  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
40  
V
VCEO  
32  
V
VEBO  
5  
V
IC  
1  
2  
A
A
Continuous  
Collector current  
Power dissipation  
1
ICP  
PD  
Tj  
Pulsed  
2.0  
W / TOTAL  
2
1.4  
W / ELEMENT  
Junction temperature  
150  
°C  
°C  
Range of storage temperature  
Tstg  
55 to +150  
1 Pw=10ms 1 Pulse  
2 Mounted on a ceramic board  
Rev.A  
1/3  

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