Datasheet > MP6X13

MP6X13

更新时间： 2024-11-26 10:49:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
6页	416K
描述
Midium Power Transistors (50V / 3A)

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中文翻译

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MP6X13 数据手册

Midium Power Transistors (50V / 3A)

MP6X13

 Structure

 Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor

 Features

(1) Tr.1 Emitter

(2) Tr.1 Base

1) Low saturation voltage

_{CE (sat)}= 0.35V (Max.) (I_C/ I_B= 1A / 50mA)

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

2) High speed switching

(6) Tr.1 Collector

 Applications

Low Frequency Amplifier Driver

 Packaging specifications

 Inner circuit

Package

Type

Code

MPT6

(4)

(6)

(5)

Basic ordering unit (pieces)

1000

 Absolute maximum ratings (Ta = 25C)

ꢀ<It is the same ratings for the Tr.1 and Tr.2>

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

Parameter

Collector-base voltage

Symbol

Limits

Unit

(1)

(2)

(3)

V_CBO

V_CEO

V_EBO

I_C

(6) Tr.1 Collector

Collector-emitter voltage

Emitter-base voltage

Continuous

Pulsed

Collector current

Power dissipation

I_CP

P_D

T_j

2.0

W/Total

W/Element

C

1.4

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

C

*1 Pw=10ms, 1Pulse

*2 Mounted on a 40 x 40 x 0.7[mm ] ceramic board.

www.rohm.com

2010.11 - Rev.A

1/5

12 3 4 5 6

中文翻译

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与MP6X13相关器件

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MP6X13TR	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6
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