Datasheet > MP6T3

MP6T3

更新时间： 2024-11-23 05:49:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	114K
描述
Medium Power Transistor (−60V, −3A)

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MP6T3 数据手册

MP6T3

Transistors

Medium Power Transistor (−60V, −3A)

MP6T3

(Unit : mm)

Dimensions

zFeatures

1) High speed switching. (t_f: Typ. : 20ns at Ic= −3A)

2) Low saturation voltage, typically

(Typ. : −200mV at Ic = −2A, I^B= −0.2A)

3) Strong discharge power for inductive load and

capacitance load.

MPT6

(6)

(5)

(2)

(4)

4) Contain two 2SA2071-dies in a package.

zApplications

(1)

(3)

Low frequency amplifier

High speed switching

zStructure

PNP Silicon epitaxial planar transistor

Inner circuit

Packaging specifications

Package

Taping

(6)

(5)

(4)

(1) Emitter <Tr1>

(2) Base <Tr1>

Type

Code

(3) Collector <Tr2>

(4) Emitter <Tr2>

(5) Base <Tr2>

Basic ordering unit(pieces)

1000

MP6T3

<Tr2>

<Tr1>

(6) Collector <Tr1>

(1)

(2)

(3)

(Ta=25 C)

Absolute maximum ratings

<Tr1, Tr2>

Parameter

Symbol

V_CBO

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

−60

V_CEO

−60

V_EBO

−6

I_C

−3

−6

Continuous

Collector current

Power dissipation

∗

I_CP

P_D

Pulsed

2.0

W / TOTAL

∗

1.4

W / ELEMENT

Junction temperature

150

°C

Range of storage temperature

Tstg

−55 to +150

1 Pw=10ms 1 Pulse

∗

2 Mounted on a ceramic board

∗

Rev.A

1/3

12 3 4

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