Datasheet > MP6Z12

MP6Z12

更新时间： 2024-11-23 10:49:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
8页	485K
描述
Midium Power Transistors

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中文翻译

获取价格

数据手册

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MP6Z12 数据手册

Midium Power Transistors (±50V / ±1A)

MP6Z12

 Structure

 Dimensions (Unit : mm)

NPN/PNP Silicon epitaxial planar transistor

MPT6

(Dual)

 Features

(6)

(1)

(5)

(2)

(4)

(3)

1) Low saturation voltage, typically

_{CE (sat)}= 0.35V (Max.) (I_C/ I_B= 500mA / 25mA)

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

V_{CE (sat)}= -0.40V (Max.) (I_C/ I_B= -500mA / -25mA)

2) High speed switching

(6) Tr.1 Collector

 Applications

Low Frequency Amplifier

Driver

 Packaging specifications

 Inner circuit (Unit : mm)

Package

Code

MPT6

Type

(6)

(5)

(4)

Basic ordering unit (pieces) 1000

Tr.2

(1) Tr.1 Emitter

(2) Tr.1 Base

Tr.1

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

 Absolute maximum ratings (Ta = 25C)

ꢀ<Tr.1>

(2)

(3)

(1)

(6) Tr.1 Collector

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector current

Pulsed

I_CP

ꢀ<Tr.2>

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Limits

-50

-6

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

-1

Collector current

Pulsed

I_CP

-2

ꢀ<Tr.1 and Tr.2>

Parameter

Symbol

Limits

2.0

Unit

W/Total

W/Element

C

P_D

Power dissipation

P_D

1.4

Junction temperature

T_j

150

Range of storage temperature

T_stg

-55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board.

www.rohm.com

2010.11 - Rev.A

1/7

12 3 4 5 6 7 8

中文翻译

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