Datasheet > MP6Z1

MP6Z1

更新时间： 2024-11-23 10:49:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
7页	171K
描述
Medium Power Transistor (-32V, -1A)

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中文翻译

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数据手册

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MP6Z1 数据手册

Medium Power Transistor (-32V, -1A)

MP6Z1

Applications

Low frequency amplifier

Dimensions (Unit : mm)

MPT6

Features

1) Low V^CE(sat)

(6)

(5)

(4)

VCE(sat) = -0.2V(Typ.)

(I^C/ IB = -500mA / -50mA)

2) Contains 2SD1664-die and 2SB1132-die

in a package.

(1)

(2)

(3)

Structure

Silicon epitaxial planar transistor



Inner circuit

Packaging specifications

Package

Taping

(6)

(5)

(4)

(1) Emitter <Tr1>

(2) Base <Tr1>

Type

Code

(3) Collector <Tr2>

(4) Emitter <Tr2>

(5) Base <Tr2>

Basic ordering unit(pieces)

1000

<Tr2>

<Tr1>

(6) Collector <Tr1>

MP6Z1

(1)

(2)

(3)



(Ta=25 C)

Absolute maximum ratings



Limits

Parameter

Symbol

Unit

Tr1

Tr2

−40

−32

−5

−1.0

−2.0

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

V_CBO

V_CEO

V_EBO

I_C

Continuous

Collector current

1.0

2.0

∗1

∗2

Pulsed

I_CP

2.0

1.4

W / TOTAL

W / ELEMENT

°C

P_D

Power dissipation

Junction temperature

T_j

150

Range of storage temperature

∗1 Pw=10ms 1Pulse

∗2 Mounted on a ceramic board

Tstg

−55 to 150

°C

www.rohm.com

2010.01 - Rev.B

1/6

12 3 4 5 6 7

中文翻译

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