5秒后页面跳转
MP6T12TR PDF预览

MP6T12TR

更新时间: 2024-11-23 21:01:15
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
6页 372K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MPT6, 6 PIN

MP6T12TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):180
JESD-30 代码:R-PDSO-F6JESD-609代码:e2
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN COPPER端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):400 MHzBase Number Matches:1

MP6T12TR 数据手册

 浏览型号MP6T12TR的Datasheet PDF文件第2页浏览型号MP6T12TR的Datasheet PDF文件第3页浏览型号MP6T12TR的Datasheet PDF文件第4页浏览型号MP6T12TR的Datasheet PDF文件第5页浏览型号MP6T12TR的Datasheet PDF文件第6页 
Midium Power Transistors (-50V / -1A)  
MP6T12  
Structure  
Dimensions (Unit : mm)  
PNP Silicon epitaxial planar transistor  
MPT6  
Features  
(6)  
(1)  
(5)  
(2)  
(4)  
(3)  
1) Low saturation voltage, typically  
V
CE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA)  
2) High speed switching  
Applications  
Low Frequency Amplifier  
High Speed Switching  
Inner circuit (Unit : mm)  
Packaging specifications  
(4)  
(6)  
(5)  
Package  
MPT6  
TR  
Type  
Code  
Basic ordering unit (pieces) 1000  
(1) Tr.1 Emitter  
(2) Tr.1 Base  
(3) Tr.2 Collector  
(4) Tr.2 Emitter  
(5) Tr.2 Base  
(3)  
(6) Tr.1 Collector  
(1)  
(2)  
Absolute maximum ratings (Ta = 25C)  
<It is the same ratings for the Tr.1 and Tr.2>  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
IC  
-50  
V
-50  
V
-6  
V
DC  
-1  
-2  
A
A
Collector current  
*1  
Pulsed  
ICP  
PD  
PD  
Tj  
*2  
*2  
2.0  
W/Total  
W/Element  
C  
Power dissipation  
1.4  
Junction temperature  
150  
Range of storage temperature  
Tstg  
-55 to +150  
C  
*1 Pw=10ms, Single Pulse  
3
*2 Mounted on a 40 x 40 x 0.7[mm ] ceramic board  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
2010.07 - Rev.A  
1/5  

与MP6T12TR相关器件

型号 品牌 获取价格 描述 数据表
MP6T13 ROHM

获取价格

Midium Power Transistors (-50V / -3A)
MP6T13TR ROHM

获取价格

Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 6
MP6T1TR ROHM

获取价格

Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 2-Element, PNP, Silicon, MPT6, 6 P
MP6T2 ROHM

获取价格

Medium Power Transistor (−32V, −2A)
MP6T2TR ROHM

获取价格

Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 6
MP6T3 ROHM

获取价格

Medium Power Transistor (−60V, −3A)
MP6T3TR ROHM

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 6
MP6X1 ROHM

获取价格

Medium Power Transistor (32V, 1A)
MP6X11 ROHM

获取价格

Midium Power Transistors (30V / 1A)
MP6X12 ROHM

获取价格

Midium Power Transistors (50V / 1A)