Datasheet > MMST2222A

MMST2222A

更新时间： 2024-04-09 19:02:17

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	436K
描述
40V,0.6A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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MMST2222A 数据手册

NPN Silicon Epitaxial Planar Transistor

MMST2222A

Features



Epitaxial planar die construction

Complimentary to MMST2907A

Ultra-small surface mount package

Mechanical Data



Case: SOT-323

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-323

Ordering Information

Part Number

Package

SOT-323

Shipping Quantity

Marking Code

MMST2222A

3000 pcs / Tape & Reel

K3P

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Collector-Base Breakdown Voltage

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

0.6

0.8

0.15

0.2

I_CM

Continuous Base Current

I_B

Peak Base Current

I_BM

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

0.2

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Ambient Temperature

R_θJA

R_θJC

R_θJL

T_A

252

°C /W

°C

147

174

-55 ~ +150

Junction Temperature Range

Storage Temperature Range

T_J

°C

T_STG

°C

Note 1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM0099A: October 2023 [2.2]

www.gmesemi.com

12 3 4 5

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