Datasheet > MMST2222A

MMST2222A

更新时间： 2023-12-06 20:07:55

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	1560K
描述
双极型晶体管

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数据手册

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MMST2222A 数据手册

MMST2222A

SOT-323 Transistor (NPN)

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

Features

Epitaxial planar die construction

Complementary PNP Type available(MMST2907A)

MARKING: K3P

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

600

200

150

P_C

T_J

Junction Temperature

℃

T_stg

Storage Temperature

-55to+150

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_CEO

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

h_FE(6)

I_C= 10μA, I_E=0

I_C= 10mA, I_B=0

I_E=10μA, I_C=0

V_CB=70 V, I_E=0

V_CE=35V , I_B=0

100

V_EB= 3V , I_C=0

V_CE=10V, I_C=0.1mA

V_CE=10V, I_C= 1mA

V_CE=10V, I_C= 10mA

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 500mA

V_CE=1V, I_C= 150mA

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

V_CE=20V, I_C= 20mA

f=100MHz

100

DC current gain

300

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.3

2.0

1.2

300

MHz

Output Capacitance

Delay time

Rise time

Storage time

Fall time

C_ob

t_d

t_r

t_S

t_f

225

V_CB=10V, I_E= 0,f=1MHz

V_CC=30V, V_BE(off)=-0.5V

I_C=150mA , I_B1= 15mA

V_CC=30V, I_C=150mA

I_B1=-I_B2=15mA

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