生命周期: | Transferred | 零件包装代码: | SC-59 |
包装说明: | R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.49 |
Is Samacsys: | N | 最大击穿电压: | 7.14 V |
最小击穿电压: | 6.46 V | 击穿电压标称值: | 6.8 V |
最大钳位电压: | 9.8 V | 配置: | COMMON ANODE, 4 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 150 W | 元件数量: | 4 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 0.225 W |
认证状态: | Not Qualified | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMQA6V8T1G | ROCHESTER |
获取价格 |
150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 318F-05, SC | |
MMQA6V8T1G | ONSEMI |
获取价格 |
Transient Voltage Suppressors for ESD Protection | |
MMQA6V8T3 | ONSEMI |
获取价格 |
SC-74 Quad Monolithic Common Anode | |
MMQA6V8T3 | MOTOROLA |
获取价格 |
Trans Voltage Suppressor Diode, 150W, Unidirectional, 4 Element, Silicon, PLASTIC, SC-59, | |
MMQA6V8T3G | ONSEMI |
获取价格 |
150W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 318F-05, SC- | |
MMQA-D | ONSEMI |
获取价格 |
SC-74 Quad Monolithic Common Anode | |
MMQM-67005L-30/883 | TEMIC |
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Multi-Port SRAM, 8KX8, 30ns, CMOS, CQCC68, | |
MMQM-67005L-35 | TEMIC |
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Multi-Port SRAM, 8KX8, 35ns, CMOS, CQCC68, | |
MMQM67005L35CB | TEMIC |
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Memory IC, | |
MMQM-67005L-45 | TEMIC |
获取价格 |
Multi-Port SRAM, 8KX8, 45ns, CMOS, CQCC68, |