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MMQA6V8T3G PDF预览

MMQA6V8T3G

更新时间： 2024-12-01 18:34:11
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管电视
页数 文件大小 规格书
6页 69K
描述
150W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 318F-05, SC-74, 6 PIN

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中文翻译

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MMQA6V8T3G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-74
包装说明：R-PDSO-G6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.51
最大击穿电压：7.14 V最小击穿电压：6.46 V
击穿电压标称值：6.8 V最大钳位电压：9.8 V
配置：COMMON ANODE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-G6
JESD-609代码：e3最大非重复峰值反向功率耗散：150 W
元件数量：4端子数量：6
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：0.225 W
认证状态：Not Qualified最大重复峰值反向电压：4.3 V
子类别：Transient Suppressors表面贴装：YES
技术：ZENER端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MMQA6V8T3G 数据手册

 浏览型号MMQA6V8T3G的Datasheet PDF文件第2页浏览型号MMQA6V8T3G的Datasheet PDF文件第3页浏览型号MMQA6V8T3G的Datasheet PDF文件第4页浏览型号MMQA6V8T3G的Datasheet PDF文件第5页浏览型号MMQA6V8T3G的Datasheet PDF文件第6页 
MMQA5V6T1 Series  
24 Watt Peak Power Zener  
Transient Voltage  
Suppressors  
SC−74 Quad Common Anode for Zeners  
ESD Protection  
http://onsemi.com  
These quad monolithic silicon voltage suppressors are designed for  
applications requiring transient voltage protection capability. They are  
intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems, medical  
equipment, and other applications. Their quad junction common anode  
design protects four separate lines using only one package. These devices  
are ideal for situations where board space is at a premium.  
PIN ASSIGNMENT  
1
2
3
6
5
4
6
1
SC−74  
CASE 318F  
STYLE 1  
PIN 1. CATHODE  
2. ANODE  
Features  
• SC−74 Package Allows Four Separate Unidirectional Configurations  
• Working Peak Reverse Voltage Range − 3.0 V to 2.5 V  
• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V  
• Peak Power − Minimum 24 W @ 1 ms (Unidirectional), per Figure 5  
• Peak Power − Minimum 150 W @ 20 ms (Unidirectional), per Figure 6  
• ESD Rating of Class 3 (> 16 KV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
3. CATHODE  
4. CATHODE  
5. ANODE  
6. CATHODE  
MARKING DIAGRAM  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• Low Leakage < 2.0 mA  
M
DEV  
DEV = Device Code  
= (See Table Next Page)  
= Date Code  
• Pb−Free Packages are Available  
M
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
ORDERING INFORMATION  
†
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
Device*  
Package  
Shipping  
260°C for 10 Seconds  
MMQAxxxT1  
MMQAxxxT3  
SC−74  
3000/Tape & Reel  
10,000/Tape & Reel  
SC−74  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Individual devices are listed on page 3 of this data sheet.  
*The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 7  
MMQA5V6T1/D  
123456

中文翻译

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与MMQA6V8T3G相关器件

型号 品牌 获取价格 描述 数据表
MMQA-D ONSEMI

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 		SC-74 Quad Monolithic Common Anode
MMQM-67005L-30/883 TEMIC

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 		Multi-Port SRAM, 8KX8, 30ns, CMOS, CQCC68,
MMQM-67005L-35 TEMIC

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 		Multi-Port SRAM, 8KX8, 35ns, CMOS, CQCC68,
MMQM67005L35CB TEMIC

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 		Memory IC,
MMQM-67005L-45 TEMIC

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 		Multi-Port SRAM, 8KX8, 45ns, CMOS, CQCC68,
MMQM-67005L-55 TEMIC

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 		Multi-Port SRAM, 8KX8, 55ns, CMOS, CQCC68,
MMQM-67005L-55/883 TEMIC

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 		Multi-Port SRAM, 8KX8, 55ns, CMOS, CQCC68,
MMQM-67005V-30/883 TEMIC

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 		Multi-Port SRAM, 8KX8, 30ns, CMOS, CQCC68,
MMQM-67005V-30CB TEMIC

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 		Memory IC,
MMQM-67005V-35/883 TEMIC

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 		Multi-Port SRAM, 8KX8, 35ns, CMOS, CQCC68,

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