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MMG150S120UA6TC PDF预览

MMG150S120UA6TC

更新时间: 2024-11-19 17:15:47
品牌 Logo 应用领域
宏微 - MACMIC 双极性晶体管
页数 文件大小 规格书
6页 218K
描述
IGBT 模块

MMG150S120UA6TC 数据手册

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MMG150S120UA6TC  
1200V 150A IGBT Module  
August 2020  
Version 01  
RoHS Compliant  
PRODUCT FEATURES  
IGBT CHIP(Trench+Field Stop technology)  
VCE(sat) with positive temperature coefficient  
High short circuit capability  
Fast switching and short tail current  
Free wheeling diodes with fast and soft reverse recovery  
Low switching losses  
APPLICATIONS  
High frequency switching application  
Medical applications  
Motion/servo control  
UPS systems  
IGBT  
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)  
Symbol  
VCES  
Parameter/Test Conditions  
Values  
Unit  
V
TJ=25  
Collector Emitter Voltage  
Gate Emitter Voltage  
1200  
±20  
218  
150  
300  
750  
VGES  
TC=25, TJmax=175℃  
IC  
DC Collector Current  
TC=95, TJmax=175℃  
tp=1ms  
A
ICM  
Ptot  
Repetitive Peak Collector Current  
Power Dissipation Per IGBT  
TC=25, TJmax=175℃  
W
Diode  
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)  
Symbol  
VRRM  
Parameter/Test Conditions  
Values  
1200  
Unit  
V
TJ=25℃  
Repetitive Reverse Voltage  
Average Forward Current  
IF(AV)  
IFRM  
I2t  
150  
300  
A
Repetitive Peak Forward Current  
tp=1ms  
A2S  
TJ =125, t=10ms, VR=0V  
6050  
MacMic Science & Technology Co., Ltd.  
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China  
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com  
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