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MMBZ18VCLDG PDF预览

MMBZ18VCLDG

更新时间: 2024-01-30 00:18:27
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
15页 87K
描述
Double ESD protection diodes for transient overvoltage suppression

MMBZ18VCLDG 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.74Is Samacsys:N
击穿电压标称值:18 V最大钳位电压:25 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:14.5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

MMBZ18VCLDG 数据手册

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MMBZxVCL; MMBZxVDL series  
Double ESD protection diodes for transient overvoltage  
suppression  
Rev. 01 — 3 September 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common  
cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted  
Device (SMD) plastic package. The devices are designed for ESD and transient  
overvoltage protection of up to two signal lines.  
Table 1.  
Product overview  
Type number[1]  
Package  
NXP  
Configuration  
JEDEC  
MMBZ12VDL  
MMBZ15VDL  
MMBZ18VCL  
MMBZ20VCL  
MMBZ27VCL  
MMBZ33VCL  
SOT23  
TO-236AB  
dual common cathode  
[1] All types available as /DG halogen-free version.  
1.2 Features  
I Unidirectional ESD protection of  
I ESD protection up to 30 kV (contact  
two lines  
discharge)  
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)  
I Low diode capacitance: Cd 140 pF I IEC 61643-321  
I Rated peak pulse power: PPPM 40 W I AEC-Q101 qualified  
I Ultra low leakage current: IRM 5 nA  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Automotive electronic control units  
I Portable electronics  

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