Datasheet > MMBZ20VAL/DG,215

MMBZ20VAL/DG,215

更新时间： 2024-09-25 19:16:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	125K
描述
Low capacitance unidirectional double ESD protection diodes, SOT23 (TO-236AB), Tape reel smd

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技术参数
数据手册

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MMBZ20VAL/DG,215 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否无铅：	不含铅
是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

MMBZ20VAL/DG,215 数据手册

MMBZxAL series

Low capacitance unidirectional double ESD protection diodes

Rev. 02 — 10 December 2009

Product data sheet

1. Product profile

1.1 General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common

anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted

Device (SMD) plastic package. The devices are designed for ESD and transient

overvoltage protection of up to two signal lines.

Table 1.

Product overview

Type number

Package

NXP

Configuration

JEDEC

MMBZ5V6AL

MMBZ6V2AL

MMBZ6V8AL

MMBZ9V1AL

MMBZ10VAL

MMBZ12VAL

MMBZ15VAL

MMBZ18VAL

MMBZ20VAL

MMBZ27VAL

MMBZ33VAL

SOT23

TO-236AB

dual common anode

1.2 Features

Unidirectional ESD protection of

ESD protection up to 30 kV (contact

two lines

discharge)

Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD)

Low diode capacitance: C_d≤ 280 pF IEC 61643-321

Rated peak pulse power: P_PPM= 40 W AEC-Q101 qualified

Ultra low leakage current: I_RM= 5 nA

1.3 Applications

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

Automotive electronic control units

Portable electronics

12 3 4 5 6 7...17

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