5秒后页面跳转
MMBZ20VAWT1G PDF预览

MMBZ20VAWT1G

更新时间: 2024-11-14 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管电视瞬态抑制器
页数 文件大小 规格书
5页 107K
描述
齐纳保护,40 瓦峰值功率

MMBZ20VAWT1G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:16 weeks
风险等级:1.56Samacsys Description:ESD Suppressors / TVS Diodes SC-70 3 EUT SNGL CPR PBF
最大击穿电压:21 V最小击穿电压:19 V
击穿电压标称值:20 V最大钳位电压:28 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:40 W元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.2 W最大重复峰值反向电压:17 V
子类别:Transient Suppressors表面贴装:YES
技术:ZENER端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

MMBZ20VAWT1G 数据手册

 浏览型号MMBZ20VAWT1G的Datasheet PDF文件第2页浏览型号MMBZ20VAWT1G的Datasheet PDF文件第3页浏览型号MMBZ20VAWT1G的Datasheet PDF文件第4页浏览型号MMBZ20VAWT1G的Datasheet PDF文件第5页 
MMBZ27VAWT1G  
40 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
SC70 Dual Common Anode Zeners  
for ESD Protection  
http://onsemi.com  
These dual monolithic silicon Zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
anode design protects two separate lines using only one package. These  
devices are ideal for situations where board space is at a premium.  
1
2
3
MARKING  
DIAGRAM  
Features  
AA MG  
SC70  
CASE 419  
STYLE 4  
G
SC70 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Working Peak Reverse Voltage Range  
1
AA = Specific Device Code  
Standard Zener Breakdown Voltage Range 27 V  
M
= Date Code  
Peak Power 40 W @ 1.0 ms (Unidirectional),  
G
= PbFree Package  
per Figure 5 Waveform  
(Note: Microdot may be in either location)  
ESD Rating:  
Class 3B (>16 kV) per the Human Body Model  
Class C (>400 V) per the Machine Model  
ORDERING INFORMATION  
Low Leakage < 5.0 mA  
Device  
Package  
Shipping  
Flammability Rating UL 94 V0  
This is a PbFree Device  
MMBZ27VAWT1G  
SC70  
(PbFree)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
Use the Device Number to order the 7 inch/3,000 unit reel.  
Replace the “T1” with “T3” in the Device Number to order the  
13 inch/10,000 unit reel.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
May, 2008 Rev. 0  
MMBZ27VAW/D  

MMBZ20VAWT1G 替代型号

型号 品牌 替代类型 描述 数据表
SZMMBZ20VAWT1G ONSEMI

完全替代

齐纳保护,40 瓦峰值功率
SZMMBZ20VALT1G ONSEMI

功能相似

Dual Common Anode Zener Diode Protection

与MMBZ20VAWT1G相关器件

型号 品牌 获取价格 描述 数据表
MMBZ20VCHE3 MCC

获取价格

Tape:3K/Reel,120K/Ctn;
MMBZ20VCL NXP

获取价格

Double ESD protection diodes for transient overvoltage suppression
MMBZ20VCL NEXPERIA

获取价格

Double ESD protection diode for transient overvoltage suppressionProduction
MMBZ20VCL,215 NXP

获取价格

MMBZxVCL; MMBZxVDL series - Double ESD protection diodes for transient overvoltage suppres
MMBZ20VCL,235 NXP

获取价格

TVS DIODE
MMBZ20VCL/DG NXP

获取价格

Double ESD protection diodes for transient overvoltage suppression
MMBZ20VCL/DG,215 NXP

获取价格

TVS DIODE
MMBZ20VCL/DG,235 NXP

获取价格

TVS DIODE
MMBZ20VCLDG NXP

获取价格

Double ESD protection diodes for transient overvoltage suppression
MMBZ20VCL-Q NEXPERIA

获取价格

Double ESD protection diode for transient overvoltage suppressionProduction