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MMBZ27VAL-Q PDF预览

MMBZ27VAL-Q

更新时间: 2023-09-03 20:27:40
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
11页 211K
描述
Low capacitance unidirectional double ESD protection diodeProduction

MMBZ27VAL-Q 数据手册

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MMBZ27VAL-Q  
Low capacitance unidirectional double ESD protection diode  
13 June 2022  
Product data sheet  
1. General description  
Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode  
configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic  
package. The device is designed for ESD and transient overvoltage protection of up to two signal  
lines.  
2. Features and benefits  
Unidirectional ESD protection of two lines  
Bidirectional ESD protection of one line  
Low diode capacitance: Cd ≤ 60 pF  
Rated peak pulse power: PPPM = 40 W  
Ultra low leakage current: IRM = 5 nA  
ESD protection up to 30 kV (contact discharge)  
IEC 61000-4-2; level 4 (ESD)  
IEC 61643-321  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Automotive electronic control units  
Portable electronics  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
22  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
48  
60  
pF  
 
 
 
 

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