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MMBZ20VAL PDF预览

MMBZ20VAL

更新时间: 2024-02-28 18:55:39
品牌 Logo 应用领域
恩智浦 - NXP 瞬态抑制器二极管
页数 文件大小 规格书
15页 79K
描述
Double ESD protection diodes for transient overvoltage suppression

MMBZ20VAL 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.73Base Number Matches:1

MMBZ20VAL 数据手册

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MMBZxVAL series  
Double ESD protection diodes for transient overvoltage  
suppression  
Rev. 01 — 1 September 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common  
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted  
Device (SMD) plastic package. The devices are designed for ESD and transient  
overvoltage protection of up to two signal lines.  
Table 1.  
Product overview  
Type number[1]  
Package  
NXP  
Configuration  
JEDEC  
MMBZ12VAL  
MMBZ15VAL  
MMBZ18VAL  
MMBZ20VAL  
MMBZ27VAL  
MMBZ33VAL  
SOT23  
TO-236AB  
dual common anode  
[1] All types available as /DG halogen-free version.  
1.2 Features  
I Unidirectional ESD protection of  
I ESD protection up to 30 kV (contact  
two lines  
discharge)  
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)  
I Low diode capacitance: Cd 140 pF I IEC 61643-321  
I Rated peak pulse power: PPPM 40 W I AEC-Q101 qualified  
I Ultra low leakage current: IRM 5 nA  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Automotive electronic control units  
I Portable electronics  

MMBZ20VAL 替代型号

型号 品牌 替代类型 描述 数据表
MMBZ20VAL,215 NXP

完全替代

MMBZxAL series - Low capacitance unidirectional double ESD protection diodes TO-236 3-Pin
MMBZ20VALT1G ONSEMI

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