Datasheet > MMBTH10_06

MMBTH10_06

更新时间： 2024-01-24 11:29:49

品牌	Logo	应用领域
强茂 - PANJIT		晶体晶体管
页数	文件大小	规格书
5页	117K
描述
VHF/UHF NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBTH10_06 数据手册

MMBTH10

VHF/UHF NPN SILICON TRANSISTOR

Unit: inch (mm)

SOT- 23

POWER

225 mW

VOLTAGE

25 Volts

FEATURES

• NPN Silicon

.119(3.00)

.110(2.80)

•

In compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

.083(2.10)

.066(1.70)

.006(.15)

.002(.05)

Case : SOT-23, Plastic

Terminals : Solderable per MIL-STD-750, Method 2026

Approx weight : 0.008 gram

.006(.15)MAX

.020(.50)

.013(.35)

MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Vdc

Collector-Emitter Voltage

CEO

CBO

EBO

Collector-Base Voltage

Emitter-Base Voltage

Vdc

3.0

THERMALCHARACTERISTICS

CHARACTERISTIC

SYMBOL

MAX.

UNITS

Total Device Dissipation FR-5 Board (Note 1)

=25^OC

225

1.8

Derate above 25^OC

mW/^OC

Thermal Resistance Junction to Ambient

(Note 1)

ΘJA

556

^OC/W

Total Device Dissipation Alumina Substrate

(Note 2) T

=25^OC

300

2.4

Derate above 25^OC

mW/^OC

Thermal Resistance Junction to Ambient

(Note 2)

ΘJA

417

^OC/W

^OC

Junction and Storage Temperature Range

,TSTG

-55 to +150

Note 1. FR-5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

STAD-JUN.30.2006

PAGE . 1

12 3 4 5

中文翻译

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