Datasheet > MMBTH10_07

MMBTH10_07

更新时间： 2024-09-25 10:52:23

品牌	Logo	应用领域
WEITRON		晶体晶体管射频
页数	文件大小	规格书
6页	155K
描述
NPN 1.1 GHz RF Transistor

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中文翻译

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数据手册

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MMBTH10_07 数据手册

MMBTH10

COLLECTOR

NPN 1.1 GHz RF Transistor

P b

Lead(Pb)-Free

BASE

FEATURES

Designed for VHF/UHF Amplifier Applications

SOT-23

EMITTER

and High Output VHF oscillators.

High Current Gain Bandwidth product.

Ideal for Mixer and RF Amplifier Application with Collector Current in the

100mA~20mA Range in Common emitter or Common base mode of operations.

(Ta=25 C)

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

CEO

CBO

EBO

Emitter-Base Voltage

Collector Current - Continuous

Total Power Dissipation FR-5 Board ⁽¹⁾

TA =25°C

225

1.8

Derate above =25°C

mW/°C

°C/W

°C

Rθ

556

Thermal Resistance , Junction Ambient

+150

Junction Temperature

Storage Temperature

-55~150

stg

°C

1. T = 25°C unless otherwise speciﬁed.

Device Marking

MMBTH10=3EM , HT10

WEITRON

http://www.weitron.com.tw

1/6

09-Feb-07

12 3 4 5 6

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