MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
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Features
•
Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
SOT-23
C
•
•
High Current Gain Bandwidth Product
Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100μA - 30 mA Range
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Dim
A
B
C
D
E
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
B
E
•
•
Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
G
H
J
•
•
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
•
•
•
•
K
L
M
α
•
•
•
Marking Information: K3H, K3Y; See Page 3
Ordering Information: See Page 3
All Dimensions in mm
Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
30
25
Collector-Emitter Voltage
V
Emitter-Base Voltage
3.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
50
mA
mW
°C/W
°C
300
PD
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
417
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Symbol
Min
Max
Unit
Test Condition
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
25
30
3.0
⎯
V
V
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
⎯
⎯
⎯
100
100
IC = 1mA, IB = 0
IC = 100μA, IE = 0
IE = 10μA, IC = 0
VCB = 25V, IE = 0
VEB = 2V, IC = 0
V
nA
nA
Emitter Cutoff Current
IEBO
⎯
ON CHARACTERISTICS (Note 2)
DC Current Gain
60
⎯
⎯
hFE
⎯
0.5
⎯
V
IC = 4mA, VCE = 10.0V
IC = 4mA, IB = 400μA
IC = 4mA, VCE = 10.0V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE(SAT)
VBE(SAT)
0.95
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Collector-Base Capacitance
650
⎯
⎯
MHz
pF
fT
⎯
0.7
0.65
9
VCE = 10V, f = 100MHz, IC = 4mA
VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, f = 31.8MHz, IC = 4mA
CCB
Collector-Base Feedback Capacitance
Collector-Base Time Constant
pF
CRB
Rb’Cc
ps
⎯
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS31031 Rev. 12 - 2
1 of 3
MMBTH10
© Diodes Incorporated
www.diodes.com
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