Datasheet > MMBTH10_1

MMBTH10_1

更新时间： 2024-09-25 04:39:27

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	308K
描述
NPN SURFACE MOUNT VHF/UHF TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBTH10_1 数据手册

SPICE MODEL: MMBTH10

MMBTH10

NPN SURFACE MOUNT VHF/UHF TRANSISTOR

Features

•

Designed for VHF/UHF Amplifier Applications and High

Output VHF Oscillators

SOT-23

•

High Current Gain Bandwidth Product

Ideal for Mixer and RF Amplifier Applications with

collector currents in the 100μA - 30 mA Range

Lead Free/RoHS Compliant (Note 3)

Qualified to AEC-Q101 Standards for High

Reliability

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

•

Mechanical Data

•

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

•

Marking Information: K3H, K3Y; See Page 3

Ordering Information: See Page 3

All Dimensions in mm

Weight: 0.008 grams (approximate)

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

3.0

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

°C/W

°C

P_d

300

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

417

R_θJA

T_j, T_STG

-55 to +150

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 2)

Symbol

Min

Max

Unit

Test Condition

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

3.0

⎯

I_C= 1mA, I_B= 0

I_C= 100μA, I_E= 0

I_E= 10μA, I_C= 0

V_CB= 25V, I_E= 0

V_EB= 2V, I_C= 0

⎯

100

Emitter Cutoff Current

I_EBO

⎯

ON CHARACTERISTICS (Note 2)

DC Current Gain

h_FE

⎯

I_C= 4mA, V_CE= 10.0V

I_C= 4mA, I_B= 400μA

I_C= 4mA, V_CE= 10.0V

⎯

0.5

⎯

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

V_CE(SAT)

V_BE(SAT)

0.95

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Collector-Base Capacitance

Collector-Base Feedback Capacitance

Collector-Base Time Constant

f_T

650

⎯

MHz V_CE= 10V, f = 100MHz, I_C= 4mA

⎯

0.7

0.65

C_CB

V_CB= 10V, f = 1.0MHz, I_E= 0

V_CB= 10V, f = 31.8MHz, I_C= 4mA

C_RB

Rb’Cc

⎯

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

DS31031 Rev. 11 - 2

1 of 3

MMBTH10

www.diodes.com

12 3

中文翻译

下载PDF

与MMBTH10_1相关器件

型号	品牌	获取价格	描述	数据表
MMBTH10_10	UTC	获取价格	RF TRANSISTOR
MMBTH10_15	UTC	获取价格	RF TRANSISTOR
MMBTH10_15	GSME	获取价格	SOT-23
MMBTH10_2	DIODES	获取价格	NPN SURFACE MOUNT VHF/UHF TRANSISTOR
MMBTH1037	SWST	获取价格	小信号晶体管
MMBTH10-4LT1	ONSEMI	获取价格	VHF/UHF Transistor
MMBTH10-4LT1G	ONSEMI	获取价格	VHF/UHF Transistor
MMBTH10-7	DIODES	获取价格	NPN SURFACE MOUNT VHF/UHF TRANSISTOR
MMBTH10-7-F	DIODES	获取价格	NPN SURFACE MOUNT VHF/UHF TRANSISTOR
MMBTH10-A-AE3-B-R	UTC	获取价格	RF TRANSISTOR

与MMBTH10_1相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBTH10_1

MMBTH10_1 数据手册

与MMBTH10_1相关器件

与MMBTH10_1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBTH10_1

MMBTH10_1 数据手册

与MMBTH10_1相关器件

与MMBTH10_1相关文章

您还可以找

您在本页遇到什么问题？