Datasheet > MMBD4448

MMBD4448

更新时间： 2023-12-06 20:11:37

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MMBD4448 数据手册

MMBD4448

WON-TOP ELECTRONICS

Electrical Characteristics @T_A=25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Symbol

Min.

Typ.

Max.

Unit

@ IR = 10µA

V(BR)

Forward Voltage Drop

@ IF = 5.0mA

@ IF = 10mA

@ IF = 100mA

@ IF = 150mA

0.72

0.855

1.0

VFM

1.25

Peak Reverse Leakage Current

@ VR = 75V, TJ = 25°C

@ VR = 25V, TJ = 150°C

@ VR = 75V, TJ = 150°C

2.5

IRM

µA

Diode Capacitance (VR = 0V, f = 1.0MHz)

C_D

trr

4.0

Reverse Recovery Time (IF = IR = 10mA, IRR = 0.1 x IR, RL = 100Ω)

100

500

400

300

200

100

T_A= 85°C

T_A= 25°C

1.0

0.1

T_A= -40°C

0.2

0.4

0.6

0.8

1.0

15 30 45 60 75 90 105 120 135 150

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve

2.5

10000

1000

100

T_A= 150°C

T_A= 125°C

2.0

1.5

1.0

0.5

f = 1.0MHz

T_A= 75°C

T_A= 25°C

1.0

0.1

100

V_R, DC REVERSE VOLTAGE (V)

Fig. 3 Total Capacitance vs. Reverse Voltage

V_R, INSTANTANEOUS REVERSE VOLTAGE (V)

Fig. 4 Typical Reverse Characteristics

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Revision: October, 2018

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