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MMBD2835LT1 PDF预览

MMBD2835LT1

更新时间: 2024-09-12 22:46:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 二极管开关
页数 文件大小 规格书
4页 88K
描述
Monolithic Dual Switching Diodes

MMBD2835LT1 技术参数

生命周期:Transferred包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.57配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.225 W认证状态:Not Qualified
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL

MMBD2835LT1 数据手册

 浏览型号MMBD2835LT1的Datasheet PDF文件第2页浏览型号MMBD2835LT1的Datasheet PDF文件第3页浏览型号MMBD2835LT1的Datasheet PDF文件第4页 
Order this document  
by MMBD2835LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
CATHODE  
1
3
ANODE  
3
1
2
2
CATHODE  
CASE 31808, STYLE 12  
SOT23 (TO236AB)  
MAXIMUM RATINGS (EACH DIODE)  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
Forward Current  
MMBD2835LT1  
MMBD2836LT1  
V
35  
75  
Vdc  
R
I
F
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
Derate above 25°C  
T = 25°C  
A
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage (I = 100 µAdc)  
MMBD2835LT1  
MMBD2836LT1  
V
(BR)  
35  
75  
Vdc  
R
Reverse Voltage Leakage Current  
I
R
nAdc  
(V = 30 Vdc)  
MMBD2835LT1  
MMBD2836LT1  
100  
100  
R
(V = 50 Vdc)  
R
Diode Capacitance (V = 0 V, f = 1.0 MHz)  
C
V
4.0  
pF  
R
T
Forward Voltage (I = 10 mAdc)  
1.0  
1.0  
1.2  
Vdc  
F
F
Forward Voltage (I = 50 mAdc)  
F
Forward Voltage (I = 100 mAdc)  
F
Reverse Recovery Time (I = I = 10 mAdc, I  
= 1.0 mAdc) (Figure 1)  
t
rr  
4.0  
ns  
F
R
R(REC)  
1. FR5 = 1.0  
2. Alumina = 0.4  
0.75 0.062 in.  
0.3 0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company  
REV 1  
Motorola, Inc. 1997  

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