Datasheet > MMBD2835LT1

MMBD2835LT1

更新时间： 2024-09-12 22:46:07

品牌	Logo	应用领域
乐山 - LRC		二极管开关
页数	文件大小	规格书
2页	56K
描述
Monolithic Dual Switching Diodes

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数据手册
替代型号

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MMBD2835LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Monolithic Dual Switching Diodes

MMBD2835LT1

MMBD2836LT1

CATHODE

ANODE

CATHODE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CASE 318–08, STYLE 12

SOT– 23 (TO–236AB)

Reverse Voltage

MMBD2835LT1

MMBD2836LT1

Vdc

Forward Current

I _F

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board ⁽¹⁾

P_D

225

T _A= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _{θ JA}

P_D

Alumina Substrate, ⁽²⁾T _A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _{θ JA}

T _J, T _stg

–55 to +150

DEVICE MARKING

MMBD2835LT1 = A3X;MMBD2836LT1=A2X

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)( EACH DIODE )

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage(I _R= 100 µAdc) MMBD2835LT1

MMBD2836LT1

V _(BR)

I_R

—

Vdc

Reverse Voltage Leakage Current

nAdc

(V _R= 30 Vdc)

MMBD2835LT1

MMBD2836LT1

—

100

(V _R= 50 Vdc)

Diode Capacitance

(V _R= 0, f = 1.0 MHz)

Forward Voltage(I _F= 10 mAdc)

(I _F= 50 mAdc)

C _T

V _F

—

4.0

—

1.0

1.2

4.0

Vdc

(I _F= 100 mAdc)

Reverse Recovery Time(I _F= I _R= 10 mAdc, I _R(REC)= 1.0mAdc) (Figure 1)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

t_rr

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

G20–1/2

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MMBD2835LT1 替代型号

型号	品牌	替代类型	描述	数据表
MMBD2835LT1G	ONSEMI	功能相似	Monolithic Dual Switching Diodes
MMBD2835LT1	ONSEMI	功能相似	Monolithic Dual Switching Diodes
MMBD2835LT1	MOTOROLA	功能相似	Monolithic Dual Switching Diodes

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