Datasheet > MMBD2835LT1G_09

MMBD2835LT1G_09

更新时间： 2024-09-13 05:49:19

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
4页	119K
描述
Monolithic Dual Switching Diodes

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数据手册

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MMBD2835LT1G_09 数据手册

MMBD2835LT1G,

MMBD2836LT1G

Monolithic Dual Switching

Diodes

Features

http://onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

CATHODE

ANODE

MAXIMUM RATINGS (EACH DIODE)

CATHODE

Rating

Symbol

Value

Unit

Reverse Voltage

Forward Current

MMBD2835LT1G

MMBD2836LT1G

Vdc

100

mAdc

THERMAL CHARACTERISTICS

SOT−23 (TO−236AB)

CASE 318−08

STYLE 12

Total Device Dissipation FR−5 Board

225

(Note 1)

T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction−to−Ambient

MARKING DIAGRAM

Total Device Dissipation Alumina

Substrate, (Note 2)

T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

xxx MG

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

T , T

−55 to

stg

+150

xxx = Specific Device Code

A3X = MMBD2835LT1G

A2X = MMBD2836LT1G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBD2835LT1G

SOT−23 3000 / Tape & Reel

(Pb−Free)

MMBD2836LT1G

SOT−23 3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 5

MMBD2835LT1/D

12 3 4

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