Datasheet > MMBD2835LT1_05

MMBD2835LT1_05

更新时间： 2024-09-13 04:39:31

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
4页	52K
描述
Monolithic Dual Switching Diodes

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数据手册

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MMBD2835LT1_05 数据手册

MMBD2835LT1,

MMBD2836LT1

Monolithic Dual Switching

Diodes

Features

http://onsemi.com

• Pb−Free Packages are Available

CATHODE

MAXIMUM RATINGS (EACH DIODE)

ANODE

Rating

Symbol

Value

Unit

CATHODE

Reverse Voltage

Forward Current

MMBD2835LT1

MMBD2836LT1

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Total Device Dissipation FR−5 Board

(Note 1)

225

SOT−23 (TO−236AB)

CASE 318−08

STYLE 12

T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

Substrate, (Note 2)

T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

MARKING DIAGRAM

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

T , T

−55 to

+150

stg

xxx M G

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

xxx = Specific Device Code

A3X = MMBD2835LT1

A2X = MMBD2836LT1

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

SOT−23

MMBD2835LT1

3000 / Tape & Reel

MMBD2835LT1G

SOT−23 3000 / Tape & Reel

(Pb−Free)

SOT−23

MMBD2836LT1

3000 / Tape & Reel

MMBD2836LT1G

SOT−23 3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

June, 2005 − Rev. 4

MMBD2835LT1/D

12 3 4

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