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MJE5731A PDF预览

MJE5731A

更新时间： 2024-11-01 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 193K
描述
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS

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中文翻译

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MJE5731A 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.28其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：10JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：PNP功耗环境最大值：40 W
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：10 MHz
VCEsat-Max：1 VBase Number Matches：1

MJE5731A 数据手册

 浏览型号MJE5731A的Datasheet PDF文件第2页浏览型号MJE5731A的Datasheet PDF文件第3页浏览型号MJE5731A的Datasheet PDF文件第4页浏览型号MJE5731A的Datasheet PDF文件第5页浏览型号MJE5731A的Datasheet PDF文件第6页 
Order this document  
by MJE5730/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for line operated audio output amplifier, SWITCHMODE power supply  
drivers and other switching applications.  
1.0 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
300–350–400 VOLTS  
40 WATTS  
•
•
•
•
300 V to 400 V (Min) — V  
CEO(sus)  
1.0 A Rated Collector Current  
Popular TO–220 Plastic Package  
PNP Complements to the TIP47 thru TIP50 Series  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5730  
300  
MJE5731  
350  
MJE5731A  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
300  
350  
400  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
1.0  
3.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25 C  
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
2.0  
0.016  
Watts  
W/ C  
A
Derate above 25 C  
Unclamped Inducting Load Energy (See Figure 10)  
Operating and Storage Junction Temperature Range  
E
20  
mJ  
C
T , T  
stg  
–65 to +150  
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
3.125  
62.5  
θJC  
θJA  
Motorola, Inc. 1995
123456

中文翻译

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MJE5731A 替代型号

型号 品牌 替代类型 描述 数据表
MJE5731AG ONSEMI

功能相似

 High Voltage PNP Silicon Plastic Power Transistors
MJE5731A ONSEMI

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 POWER TRANSISTORS PNP SILICON

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AN MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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