Datasheet > MJE5740_06

MJE5740_06

更新时间： 2024-11-02 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	87K
描述
NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS

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中文翻译

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MJE5740_06 数据手册

MJE5740, MJE5742

MJE5742 is a Preferred Device

NPN Silicon Power

Darlington Transistors

The MJE5740 and MJE5742 Darlington transistors are designed for

high−voltage power switching in inductive circuits.

Features

http://onsemi.com

• Pb−Free Packages are Available*

POWER DARLINGTON

TRANSISTORS

8 AMPERES

Applications

• Small Engine Ignition

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

300−400 VOLTS

80 WATTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

Vdc

CEO(sus)

MJE5740

MJE5742

300

400

≈ 100

≈ 50

Collector−Emitter Voltage

Emitter−Base Voltage

Vdc

CEV

MJE5740

MJE5742

600

800

MARKING

DIAGRAM

Vdc

Adc

Collector Current − Continuous

− Peak (Note 1)

Base Current

− Continuous

− Peak (Note 1)

2.5

Adc

Total Device Dissipation @ T = 25_C

MJE574xG

AY WW

Derate above 25°C

W/_C

Total Device Dissipation @ T = 25_C

640

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

TO−220AB

CASE 221A−09

STYLE 1

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

1.25

62.5

275

Unit

_C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

MJE574x = Device Code

x = 0 or 2

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

= Pb−Free Package

= Assembly Location

= Year

= Work Week

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 6

MJE5740/D

12 3 4 5 6

中文翻译

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与MJE5740_06相关器件

型号	品牌	获取价格	描述	数据表
MJE574016	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE574016A	MOTOROLA	获取价格	8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740A	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5740AF	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5740AJ	MOTOROLA	获取价格	8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740AJ	ONSEMI	获取价格	8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5740AK	ONSEMI	获取价格	8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5740AN	ONSEMI	获取价格	暂无描述
MJE5740AS	ONSEMI	获取价格	8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5740AU	ONSEMI	获取价格	8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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