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MJE5740S

更新时间： 2024-11-02 13:11:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管达林顿晶体管开关局域网
页数 文件大小 规格书
6页 219K
描述
8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB

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MJE5740S 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.75Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：300 V配置：DARLINGTON
最小直流电流增益 (hFE)：200JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：80 W
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHzBase Number Matches：1

MJE5740S 数据手册

 浏览型号MJE5740S的Datasheet PDF文件第2页浏览型号MJE5740S的Datasheet PDF文件第3页浏览型号MJE5740S的Datasheet PDF文件第4页浏览型号MJE5740S的Datasheet PDF文件第5页浏览型号MJE5740S的Datasheet PDF文件第6页 
Order this document  
by MJE5740/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power  
switching in inductive circuits. They are particularly suited for operation in applications  
such as:  
POWER DARLINGTON  
TRANSISTORS  
8 AMPERES  
300, 350, 400 VOLTS  
80 WATTS  
•
•
•
•
•
Small Engine Ignition  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5740 MJE5741 MJE5742  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
300  
600  
350  
700  
8
400  
800  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
8
16  
I
CM  
≈
100  
≈ 50  
Base Current — Continuous  
— Peak (1)  
I
2.5  
5
Adc  
B
I
BM  
Total Power Dissipation  
P
D
@ T = 25 C  
2
Watts  
A
16  
mW/ C  
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
80  
Watts  
C
640  
mW/ C  
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
1.56  
62.5  
275  
θJC  
θJA  
R
CASE 221A–06  
TO–220AB  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS (2)  
Collector–Emitter Sustaining Voltage  
(I = 50 mA, I = 0)  
MJE5740  
MJE5741  
MJE5742  
V
300  
350  
400  
—
—
—
—
—
—
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current (V  
= Rated Value, V  
= 1.5 Vdc)  
= 1.5 Vdc, T = 100 C)  
I
—
—
—
—
1
5
mAdc  
mAdc  
CEV  
BE(off)  
CEV  
(V  
CEV  
= Rated Value, V  
BE(off)  
C
Emitter Cutoff Current (V  
= 8 Vdc, I = 0)  
I
—
—
75  
EB  
C
EBO  
SECOND BREAKDOWN  
Second Breakdown Collector Current with Base Forward Biased  
Clamped Inductive SOA with Base Reverse Biased  
I
See Figure 6  
See Figure 7  
S/b  
RBSOA  
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.  
(continued)  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
123456

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与MJE5740S相关器件

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MJE5740T MOTOROLA

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740U MOTOROLA

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740U2 MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5740UA MOTOROLA

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740W MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5740WD MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5741 MOTOROLA

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 		POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS
MJE5741 ONSEMI

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 		POWER DARLINGTON TRANSISTORS
MJE5741 NJSEMI

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 		Trans Darlington NPN 350V 8A
MJE574116 MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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