MJE5741DW

更新时间： 2024-11-25 13:02:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
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6页	219K
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MJE5741DW 数据手册

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by MJE5740/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power

switching in inductive circuits. They are particularly suited for operation in applications

such as:

POWER DARLINGTON

TRANSISTORS

8 AMPERES

300, 350, 400 VOLTS

80 WATTS

•

Small Engine Ignition

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

MAXIMUM RATINGS

Rating

Symbol

MJE5740 MJE5741 MJE5742

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

300

600

350

700

400

800

CEO(sus)

CEV

Collector Current — Continuous

— Peak (1)

≈

100

≈ 50

Base Current — Continuous

— Peak (1)

2.5

Adc

Total Power Dissipation

@ T = 25 C

Watts

mW/ C

Derate above 25 C

Total Power Dissipation

@ T = 25 C

Watts

640

mW/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.56

62.5

275

θJC

θJA

CASE 221A–06

TO–220AB

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (2)

Collector–Emitter Sustaining Voltage

(I = 50 mA, I = 0)

MJE5740

MJE5741

MJE5742

300

350

400

—

Vdc

CEO(sus)

Collector Cutoff Current (V

= Rated Value, V

= 1.5 Vdc)

= 1.5 Vdc, T = 100 C)

—

mAdc

CEV

BE(off)

CEV

= Rated Value, V

BE(off)

Emitter Cutoff Current (V

= 8 Vdc, I = 0)

—

EBO

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

Clamped Inductive SOA with Base Reverse Biased

See Figure 6

See Figure 7

S/b

RBSOA

(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
MJE5741L	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5741S	MOTOROLA	获取价格	8A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5741U	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5741U2	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5741UA	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5741W	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5741WD	MOTOROLA	获取价格	8A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5742	MOTOROLA	获取价格	POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS
MJE5742	ONSEMI	获取价格	POWER DARLINGTON TRANSISTORS
MJE5742	NJSEMI	获取价格	Trans Darlington NPN 400V 8A 3-Pin(3+Tab) TO-220AB Rail

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