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MJE5742

更新时间： 2024-11-01 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 219K
描述
POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS

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中文翻译

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MJE5742 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.29外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：400 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：200
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
功耗环境最大值：80 W最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
VCEsat-Max：3 VBase Number Matches：1

MJE5742 数据手册

 浏览型号MJE5742的Datasheet PDF文件第2页浏览型号MJE5742的Datasheet PDF文件第3页浏览型号MJE5742的Datasheet PDF文件第4页浏览型号MJE5742的Datasheet PDF文件第5页浏览型号MJE5742的Datasheet PDF文件第6页 
Order this document  
by MJE5740/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power  
switching in inductive circuits. They are particularly suited for operation in applications  
such as:  
POWER DARLINGTON  
TRANSISTORS  
8 AMPERES  
300, 350, 400 VOLTS  
80 WATTS  
•
•
•
•
•
Small Engine Ignition  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5740 MJE5741 MJE5742  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
300  
600  
350  
700  
8
400  
800  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
8
16  
I
CM  
≈
100  
≈ 50  
Base Current — Continuous  
— Peak (1)  
I
2.5  
5
Adc  
B
I
BM  
Total Power Dissipation  
P
D
@ T = 25 C  
2
Watts  
A
16  
mW/ C  
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
80  
Watts  
C
640  
mW/ C  
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
1.56  
62.5  
275  
θJC  
θJA  
R
CASE 221A–06  
TO–220AB  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS (2)  
Collector–Emitter Sustaining Voltage  
(I = 50 mA, I = 0)  
MJE5740  
MJE5741  
MJE5742  
V
300  
350  
400  
—
—
—
—
—
—
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current (V  
= Rated Value, V  
= 1.5 Vdc)  
= 1.5 Vdc, T = 100 C)  
I
—
—
—
—
1
5
mAdc  
mAdc  
CEV  
BE(off)  
CEV  
(V  
CEV  
= Rated Value, V  
BE(off)  
C
Emitter Cutoff Current (V  
= 8 Vdc, I = 0)  
I
—
—
75  
EB  
C
EBO  
SECOND BREAKDOWN  
Second Breakdown Collector Current with Base Forward Biased  
Clamped Inductive SOA with Base Reverse Biased  
I
See Figure 6  
See Figure 7  
S/b  
RBSOA  
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.  
(continued)  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
123456

中文翻译

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MJE5742 替代型号

型号 品牌 替代类型 描述 数据表
MJE5742G ONSEMI

功能相似

 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
MJE5740G ONSEMI

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 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
MJE5742 ONSEMI

功能相似

 POWER DARLINGTON TRANSISTORS

与MJE5742相关器件

型号 品牌 获取价格 描述 数据表
MJE5742A MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5742AF ONSEMI

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 		TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5742AJ ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5742AK ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5742AS ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5742BA ONSEMI

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 		TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5742BC ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5742BS ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5742BU ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5742BV ONSEMI

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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