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MJE5742BC PDF预览

MJE5742BC

更新时间： 2024-11-25 18:34:59
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 123K
描述
8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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MJE5742BC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.79外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：400 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：200
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MJE5742BC 数据手册

 浏览型号MJE5742BC的Datasheet PDF文件第2页浏览型号MJE5742BC的Datasheet PDF文件第3页浏览型号MJE5742BC的Datasheet PDF文件第4页浏览型号MJE5742BC的Datasheet PDF文件第5页浏览型号MJE5742BC的Datasheet PDF文件第6页 
MJE5740G, MJE5742G  
NPN Silicon Power  
Darlington Transistors  
The MJE5740G and MJE5742G Darlington transistors are designed  
for high−voltage power switching in inductive circuits.  
Features  
http://onsemi.com  
• These Devices are Pb−Free and are RoHS Compliant*  
POWER DARLINGTON  
TRANSISTORS  
8 AMPERES  
Applications  
• Small Engine Ignition  
• Switching Regulators  
• Inverters  
• Solenoid and Relay Drivers  
• Motor Controls  
300−400 VOLTS  
80 WATTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
V
Vdc  
CEO(sus)  
MJE5740  
MJE5742  
300  
400  
≈ 100  
COLLECTOR 2,4  
BASE  
≈ 50  
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
Vdc  
CEV  
MJE5740  
MJE5742  
600  
800  
V
8
Vdc  
Adc  
EB  
1
Collector Current − Continuous  
− Peak (Note 1)  
I
C
8
16  
I
CM  
EMITTER 3  
Base Current  
− Continuous  
− Peak (Note 1)  
I
2.5  
5
Adc  
B
I
BM  
MARKING  
DIAGRAM  
Total Device Dissipation @ T = 25_C  
P
2
W
A
D
Derate above 25°C  
0.016  
W/_C  
Total Device Dissipation @ T = 25_C  
P
D
100  
0.8  
W
C
Derate above 25°C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
_C  
stg  
MJE574xG  
AY WW  
THERMAL CHARACTERISTICS  
TO−220AB  
CASE 221A−09  
STYLE 1  
Characteristics  
Symbol  
Max  
1.25  
62.5  
275  
Unit  
_C/W  
_C/W  
_C  
1
2
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
3
R
q
JA  
MJE574x =  
Device Code  
x = 0 or 2  
Pb−Free Package  
Assembly Location  
Year  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
G
A
Y
WW  
=
=
=
=
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 − Rev. 11  
MJE5740/D  
 
123456

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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MJE5742G ONSEMI

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 		NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
MJE5742L MOTOROLA

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MJE5742N MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5742S MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5742U MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5742U2 MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB

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