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MJE5742G PDF预览

MJE5742G

更新时间： 2024-11-02 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 87K
描述
NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS

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中文翻译

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MJE5742G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：8 weeks风险等级：0.86
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：400 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：200JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Matte Tin (Sn) - annealed端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MJE5742G 数据手册

 浏览型号MJE5742G的Datasheet PDF文件第2页浏览型号MJE5742G的Datasheet PDF文件第3页浏览型号MJE5742G的Datasheet PDF文件第4页浏览型号MJE5742G的Datasheet PDF文件第5页浏览型号MJE5742G的Datasheet PDF文件第6页 
MJE5740, MJE5742  
MJE5742 is a Preferred Device  
NPN Silicon Power  
Darlington Transistors  
The MJE5740 and MJE5742 Darlington transistors are designed for  
high−voltage power switching in inductive circuits.  
Features  
http://onsemi.com  
• Pb−Free Packages are Available*  
POWER DARLINGTON  
TRANSISTORS  
8 AMPERES  
Applications  
• Small Engine Ignition  
• Switching Regulators  
• Inverters  
• Solenoid and Relay Drivers  
• Motor Controls  
300−400 VOLTS  
80 WATTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
V
Vdc  
CEO(sus)  
MJE5740  
MJE5742  
300  
400  
≈ 100  
≈ 50  
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
Vdc  
CEV  
MJE5740  
MJE5742  
600  
800  
MARKING  
DIAGRAM  
V
8
Vdc  
Adc  
EB  
Collector Current − Continuous  
− Peak (Note 1)  
I
8
16  
C
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
2.5  
5
Adc  
B
I
BM  
Total Device Dissipation @ T = 25_C  
P
2
16  
W
C
D
MJE574xG  
AY WW  
Derate above 25°C  
W/_C  
W
W/_C  
_C  
Total Device Dissipation @ T = 25_C  
P
80  
640  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
TO−220AB  
CASE 221A−09  
STYLE 1  
stg  
1
2
3
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
1.25  
62.5  
275  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
L
R
q
MJE574x = Device Code  
x = 0 or 2  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
G
= Pb−Free Package  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 6  
MJE5740/D  
 
123456

中文翻译

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MJE5742G 替代型号

型号 品牌 替代类型 描述 数据表
MJE5742 ONSEMI

完全替代

 POWER DARLINGTON TRANSISTORS
MJE5740G ONSEMI

类似代替

 NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
KSE5742 FAIRCHILD

功能相似

 High Voltage Power Switching In Inductive Circuits

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