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MJE5740AS

更新时间： 2024-11-02 12:59:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管达林顿晶体管开关局域网
页数 文件大小 规格书
6页 219K
描述
8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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MJE5740AS 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.82外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：300 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：200
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MJE5740AS 数据手册

 浏览型号MJE5740AS的Datasheet PDF文件第2页浏览型号MJE5740AS的Datasheet PDF文件第3页浏览型号MJE5740AS的Datasheet PDF文件第4页浏览型号MJE5740AS的Datasheet PDF文件第5页浏览型号MJE5740AS的Datasheet PDF文件第6页 
Order this document  
by MJE5740/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power  
switching in inductive circuits. They are particularly suited for operation in applications  
such as:  
POWER DARLINGTON  
TRANSISTORS  
8 AMPERES  
300, 350, 400 VOLTS  
80 WATTS  
•
•
•
•
•
Small Engine Ignition  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5740 MJE5741 MJE5742  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
300  
600  
350  
700  
8
400  
800  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
8
16  
I
CM  
≈
100  
≈ 50  
Base Current — Continuous  
— Peak (1)  
I
2.5  
5
Adc  
B
I
BM  
Total Power Dissipation  
P
D
@ T = 25 C  
2
Watts  
A
16  
mW/ C  
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
80  
Watts  
C
640  
mW/ C  
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
1.56  
62.5  
275  
θJC  
θJA  
R
CASE 221A–06  
TO–220AB  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS (2)  
Collector–Emitter Sustaining Voltage  
(I = 50 mA, I = 0)  
MJE5740  
MJE5741  
MJE5742  
V
300  
350  
400  
—
—
—
—
—
—
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current (V  
= Rated Value, V  
= 1.5 Vdc)  
= 1.5 Vdc, T = 100 C)  
I
—
—
—
—
1
5
mAdc  
mAdc  
CEV  
BE(off)  
CEV  
(V  
CEV  
= Rated Value, V  
BE(off)  
C
Emitter Cutoff Current (V  
= 8 Vdc, I = 0)  
I
—
—
75  
EB  
C
EBO  
SECOND BREAKDOWN  
Second Breakdown Collector Current with Base Forward Biased  
Clamped Inductive SOA with Base Reverse Biased  
I
See Figure 6  
See Figure 7  
S/b  
RBSOA  
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.  
(continued)  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
123456

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5740BA ONSEMI

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5740BC ONSEMI

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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 		8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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 		暂无描述
MJE5740BU ONSEMI

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 		TRANSISTOR 8 A, 300 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5740BV ONSEMI

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 		TRANSISTOR 8 A, 300 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE5740C MOTOROLA

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740D1 MOTOROLA

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 		8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740G ONSEMI

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 		NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS

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