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MJE5731A PDF预览

MJE5731A

更新时间: 2024-11-24 22:33:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 142K
描述
POWER TRANSISTORS PNP SILICON

MJE5731A 数据手册

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Order this document  
by MJE5730/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for line operated audio output amplifier, SWITCHMODE power supply  
drivers and other switching applications.  
1.0 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
300350400 VOLTS  
40 WATTS  
300 V to 400 V (Min) — V  
CEO(sus)  
1.0 A Rated Collector Current  
Popular TO–220 Plastic Package  
PNP Complements to the TIP47 thru TIP50 Series  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5730  
300  
MJE5731  
350  
MJE5731A  
375  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
300  
350  
375  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
1.0  
3.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25 C  
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
2.0  
0.016  
Watts  
W/ C  
A
Derate above 25 C  
Unclamped Inducting Load Energy (See Figure 10)  
Operating and Storage Junction Temperature Range  
E
20  
mJ  
C
T , T  
stg  
65 to +150  
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
3.125  
62.5  
θJC  
θJA  
REV 1  
Motorola, Inc. 1997

MJE5731A 替代型号

型号 品牌 替代类型 描述 数据表
MJE5731AG ONSEMI

类似代替

High Voltage PNP Silicon Plastic Power Transistors
MJE5731A MOTOROLA

功能相似

1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS

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