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MJE5731AA

更新时间： 2024-11-02 13:11:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 193K
描述
Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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MJE5731AA 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.73
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：1 A集电极-发射极最大电压：375 V
配置：SINGLE最小直流电流增益 (hFE)：30
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：PNP
功耗环境最大值：40 W认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：10 MHz
Base Number Matches：1

MJE5731AA 数据手册

 浏览型号MJE5731AA的Datasheet PDF文件第2页浏览型号MJE5731AA的Datasheet PDF文件第3页浏览型号MJE5731AA的Datasheet PDF文件第4页浏览型号MJE5731AA的Datasheet PDF文件第5页浏览型号MJE5731AA的Datasheet PDF文件第6页 
Order this document  
by MJE5730/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for line operated audio output amplifier, SWITCHMODE power supply  
drivers and other switching applications.  
1.0 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
300–350–400 VOLTS  
40 WATTS  
•
•
•
•
300 V to 400 V (Min) — V  
CEO(sus)  
1.0 A Rated Collector Current  
Popular TO–220 Plastic Package  
PNP Complements to the TIP47 thru TIP50 Series  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5730  
300  
MJE5731  
350  
MJE5731A  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
300  
350  
400  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
1.0  
3.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25 C  
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
2.0  
0.016  
Watts  
W/ C  
A
Derate above 25 C  
Unclamped Inducting Load Energy (See Figure 10)  
Operating and Storage Junction Temperature Range  
E
20  
mJ  
C
T , T  
stg  
–65 to +150  
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
3.125  
62.5  
θJC  
θJA  
Motorola, Inc. 1995
123456

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与MJE5731AA相关器件

型号 品牌 获取价格 描述 数据表
MJE5731AAF MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AAJ MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AC MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AG ONSEMI

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 		High Voltage PNP Silicon Plastic Power Transistors
MJE5731AJ MOTOROLA

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 		1A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5731AL MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AN MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AS MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AT MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AU2 MOTOROLA

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 		Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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