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MJE5731AU2 PDF预览

MJE5731AU2

更新时间: 2024-11-26 04:46:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 局域网开关晶体管
页数 文件大小 规格书
4页 156K
描述
Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

MJE5731AU2 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:375 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:40 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz

MJE5731AU2 数据手册

 浏览型号MJE5731AU2的Datasheet PDF文件第2页浏览型号MJE5731AU2的Datasheet PDF文件第3页浏览型号MJE5731AU2的Datasheet PDF文件第4页 

与MJE5731AU2相关器件

型号 品牌 获取价格 描述 数据表
MJE5731AUA MOTOROLA

获取价格

1A, 375V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5731AW MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731AWD MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731C MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731D1 MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731G ONSEMI

获取价格

High Voltage PNP Silicon Plastic Power Transistors
MJE5731L MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731N MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731S MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731U MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast