生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 375 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
功耗环境最大值: | 40 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE5731AUA | MOTOROLA |
获取价格 |
1A, 375V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
MJE5731AW | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5731AWD | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5731C | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5731D1 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5731G | ONSEMI |
获取价格 |
High Voltage PNP Silicon Plastic Power Transistors | |
MJE5731L | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5731N | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5731S | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5731U | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |