5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> MJE5740
MJE5740 PDF预览

MJE5740

更新时间： 2024-11-01 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管达林顿晶体管开关局域网
页数 文件大小 规格书
6页 219K
描述
POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS

阅读下载

中文翻译

获取价格

MJE5740 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
HTS代码：8541.29.00.95风险等级：5.79
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：300 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：200JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：80 W
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONVCEsat-Max：3 V
Base Number Matches：1

MJE5740 数据手册

 浏览型号MJE5740的Datasheet PDF文件第2页浏览型号MJE5740的Datasheet PDF文件第3页浏览型号MJE5740的Datasheet PDF文件第4页浏览型号MJE5740的Datasheet PDF文件第5页浏览型号MJE5740的Datasheet PDF文件第6页 
Order this document  
by MJE5740/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power  
switching in inductive circuits. They are particularly suited for operation in applications  
such as:  
POWER DARLINGTON  
TRANSISTORS  
8 AMPERES  
300, 350, 400 VOLTS  
80 WATTS  
•
•
•
•
•
Small Engine Ignition  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5740 MJE5741 MJE5742  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
300  
600  
350  
700  
8
400  
800  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
8
16  
I
CM  
≈
100  
≈ 50  
Base Current — Continuous  
— Peak (1)  
I
2.5  
5
Adc  
B
I
BM  
Total Power Dissipation  
P
D
@ T = 25 C  
2
Watts  
A
16  
mW/ C  
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
80  
Watts  
C
640  
mW/ C  
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
1.56  
62.5  
275  
θJC  
θJA  
R
CASE 221A–06  
TO–220AB  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS (2)  
Collector–Emitter Sustaining Voltage  
(I = 50 mA, I = 0)  
MJE5740  
MJE5741  
MJE5742  
V
300  
350  
400  
—
—
—
—
—
—
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current (V  
= Rated Value, V  
= 1.5 Vdc)  
= 1.5 Vdc, T = 100 C)  
I
—
—
—
—
1
5
mAdc  
mAdc  
CEV  
BE(off)  
CEV  
(V  
CEV  
= Rated Value, V  
BE(off)  
C
Emitter Cutoff Current (V  
= 8 Vdc, I = 0)  
I
—
—
75  
EB  
C
EBO  
SECOND BREAKDOWN  
Second Breakdown Collector Current with Base Forward Biased  
Clamped Inductive SOA with Base Reverse Biased  
I
See Figure 6  
See Figure 7  
S/b  
RBSOA  
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.  
(continued)  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
123456

中文翻译

下载PDF

与MJE5740相关器件

型号 品牌 获取价格 描述 数据表
MJE5740_06 ONSEMI

获取价格

 		NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
MJE574016 MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE574016A MOTOROLA

获取价格

 		8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740A MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5740AF MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE5740AJ MOTOROLA

获取价格

 		8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE5740AJ ONSEMI

获取价格

 		8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5740AK ONSEMI

获取价格

 		8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE5740AN ONSEMI

获取价格

 		暂无描述
MJE5740AS ONSEMI

获取价格

 		8A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

与MJE5740相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证