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MJE2361TBS PDF预览

MJE2361TBS

更新时间: 2024-11-03 06:05:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
59页 340K
描述
0.5A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE2361TBS 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
0.5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
. . . useful for general–purpose, high voltage applications requiring high f .  
T
Collector–Emitter Sustaining Voltage —  
= 350 Vdc (Min) @ I = 2.5 mAdc  
350 VOLTS  
30 WATTS  
V
CEO(sus)  
DC Current Gain —  
= 40 (Min) @ I = 100 mAdc — MJE2361T  
C
h
FE  
Current–Gain–Bandwidth Product —  
= 10 MHz (Typ) @ I = 50 mAdc  
C
f
T
C
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
350  
375  
6.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Base Current  
V
CEO  
V
CB  
V
EB  
CASE 221A–06  
TO–220AB  
I
C
0.5  
I
B
0.25  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
30  
0.24  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
4.167  
C/W  
JC  
40  
35  
30  
25  
20  
15  
10  
5.0  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power–Temperature Derating Curve  
REV 1  
3–626  
Motorola Bipolar Power Transistor Device Data  

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