是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.22 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 12 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE172STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
MJE172STU | ONSEMI |
获取价格 |
3.0 A, 80 V PNP Bipolar Power Transistor | |
MJE180 | FAIRCHILD |
获取价格 |
Low Power Audio Amplifier Low Current High Speed Switching Applications | |
MJE180 | MOSPEC |
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POWER TRANSISTORS(3.0A,40-80V,12.5W) | |
MJE180 | ONSEMI |
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Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS | |
MJE180 | ISC |
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isc Silicon NPN Power Transistor | |
MJE180 | SAVANTIC |
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Silicon NPN Power Transistors | |
MJE180 | NJSEMI |
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Trans GP BJT NPN 40V 3A 3-Pin TO-126 Box | |
MJE180 | CENTRAL |
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40V,3A,1.5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Swit | |
MJE18002 | MOTOROLA |
获取价格 |
POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS |