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MJE172_03 PDF预览

MJE172_03

更新时间: 2024-11-28 04:15:31
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意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 53K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJE172_03 数据手册

 浏览型号MJE172_03的Datasheet PDF文件第2页浏览型号MJE172_03的Datasheet PDF文件第3页浏览型号MJE172_03的Datasheet PDF文件第4页 
MJE172  
MJE182  
®
COMPLEMENTARY SILICON POWER TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
DESCRIPTION  
The MJE172 (PNP type) and MJE182 (NPN type)  
are silicon Epitaxial Planar, complementary  
transistors in Jedec SOT-32 plastic package.  
They are designed for low power audio amplifier  
and low current, high speed switching  
applications.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
MJE182  
MJE172  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage (IB = 0)  
Collector-Base Voltage (IE = 0)  
Base-Emitter Voltage (IC = 0)  
Collector Current  
80  
V
V
100  
7
V
3
A
ICM  
IB  
Collector Peak Current (tp < 5 ms)  
Base Current  
6
1
A
A
o
Ptot  
Tstg  
Tj  
12.5  
W
oC  
oC  
Total Power Dissipation at Tcase 25 C  
Storage Temperature  
-65 to 150  
150  
o
Total Power Dissipation at Tcase 25 C  
For PNP type voltage and current values are negative.  
September 2003  
1/4  

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