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MJE171

更新时间： 2024-11-27 22:46:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关音频放大器
页数 文件大小 规格书
5页 52K
描述
Low Power Audio Amplifier Low Current, High Speed Switching Applications

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中文翻译

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MJE171 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.17Base Number Matches：1

MJE171 数据手册

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MJE170/171/172  
Low Power Audio Amplifier  
Low Current, High Speed Switching Applications  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: MJE170  
: MJE171  
: MJE172  
- 60  
- 80  
- 100  
V
V
V
CBO  
: MJE170  
: MJE171  
: MJE172  
- 40  
- 60  
- 80  
V
V
V
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 7  
- 3  
V
A
I
I
I
C
- 6  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
12.5  
1.5  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max. Units  
BV  
Collector-Emitter Breaksown Voltage  
CEO  
: MJE170  
: MJE171  
: MJE172  
I
= 10mA, I = 0  
-40  
-60  
-80  
V
V
V
C
B
I
Collector Cut-off Current : MJE170  
V
V
V
V
V
V
= - 60V, I = 0  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
µA  
µA  
µA  
mA  
mA  
mA  
CBO  
CB  
CB  
CB  
CB  
CB  
CB  
B
: MJE171  
: MJE172  
: MJE170  
: MJE171  
: MJE172  
= - 80V, I = 0  
E
= - 100V, I = 0  
E
= - 60V, I = 0, @T = 150°C  
E
C
= - 80V, I = 0, @T = 150°C  
E
C
= - 100V, I = 0, @T = 150°C  
E
C
I
Emitter Cut-off Current  
DC Current Gain  
V
= - 7V, I = 0  
-0.1  
250  
µA  
EBO  
BE  
C
h
V
V
V
= - 1V, I = - 100mA  
50  
30  
12  
FE  
CE  
CE  
CE  
C
= - 1V, I = - 500mA  
C
= - 1V, I = - 1.5A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= - 500mA, I = - 50mA  
-0.3  
-0.9  
-1.7  
V
V
V
CE  
C
C
C
B
= - 1.5A, I = - 150mA  
B
= - 3A, I = - 600mA  
B
V
V
(sat)  
(on)  
I
I
= - 1.5A, I = - 150mA  
-1.5  
-2.0  
V
V
BE  
BE  
C
C
B
= - 3A, I = - 600mA  
B
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
V
V
= - 1V, I = - 500mA  
-1.2  
V
CE  
CE  
CB  
C
f
= - 10V, I = - 100mA  
50  
MHz  
pF  
T
C
C
= - 10V, I = 0, f = 0.1MHz  
E
50  
ob  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  
12345

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