Datasheet > MJE171_06

MJE171_06

更新时间： 2024-11-28 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	83K
描述
Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS

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中文翻译

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数据手册

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MJE171_06 数据手册

MJE170, MJE171, MJE172

(PNP), MJE180, MJE181,

MJE182 (NPN)

Preferred Device

Complementary Plastic

Silicon Power Transistors

http://onsemi.com

The MJE170/180 series is designed for low power audio amplifier

and low current, high speed switching applications.

3 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

40 − 60 − 80 VOLTS

12.5 WATTS

Features

• Collector−Emitter Sustaining Voltage −

= 40 Vdc − MJE170, MJE180

= 60 Vdc − MJE171, MJE181

= 80 Vdc − MJE172, MJE182

CEO(sus)

• DC Current Gain −

= 30 (Min) @ I = 0.5 Adc

= 12 (Min) @ I = 1.5 Adc

• Current−Gain − Bandwidth Product −

= 50 MHz (Min) @ I = 100 mAdc

• Annular Construction for Low Leakages −

TO−225AA

CASE 77−09

STYLE 1

= 100 nA (Max) @ Rated V

CBO

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Machine Model, C

Human Body Model, 3B

• Pb−Free Packages are Available*

MARKING DIAGRAM

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Base Voltage

MJE170, MJE180

MJE171, MJE181

MJE172, MJE182

Vdc

YWW

JE1xxG

100

Collector−Emitter Voltage

MJE170, MJE180

Vdc

CEO

MJE171, MJE181

MJE172, MJE182

= Year

= Work Week

Emitter−Base Voltage

7.0

Vdc

Adc

JE1xx = Specific Device Code

x = 70, 71, 72, 80, 81, or 82

Collector Current − Continuous

− Peak

3.0

6.0

= Pb−Free Package

Base Current

1.0

Adc

Total Power Dissipation @ T = 25_C

1.5

0.012

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Derate above 25_C

W/_C

Total Power Dissipation @ T = 25_C

12.5

0.1

Derate above 25_C

W/_C

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

stg

Preferred devices are recommended choices for future use

and best overall value.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not normal

operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be

affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 9

MJE171/D

12 3 4 5 6

中文翻译

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与MJE171_06相关器件

型号	品牌	获取价格	描述	数据表
MJE171G	ONSEMI	获取价格	Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS
MJE172	MOSPEC	获取价格	POWER TRANSISTORS(3.0A,40-80V,12.5W)
MJE172	ISC	获取价格	Silicon PNP Power Transistors
MJE172	SAVANTIC	获取价格	Silicon PNP Power Transistors
MJE172	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJE172	SAMSUNG	获取价格	PNP (LOW FREQUENCY AMPLIFIER)
MJE172	FAIRCHILD	获取价格	Low Power Audio Amplifier Low Current, High Speed Switching Applications
MJE172	MOTOROLA	获取价格	3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
MJE172	ONSEMI	获取价格	POWER TRANSISTORS COMPLEMENTARY SILICON
MJE172	CJ	获取价格	TO-126

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