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MJE171 PDF预览

MJE171

更新时间: 2024-11-28 10:55:47
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 105K
描述
isc Silicon PNP Power Transistor

MJE171 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.53
Base Number Matches:1

MJE171 数据手册

 浏览型号MJE171的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
MJE171  
DESCRIPTION  
·Collector–Emitter Sustaining Voltage—  
: VCEO(SUS) = -60V  
·DC Current Gain—  
: hFE = 30(Min) @ IC= -0.5 A  
= 12(Min) @ IC= -1.5 A  
·Complement to Type MJE181  
APPLICATIONS  
·Low power audio amplifier applications.  
·Low current high speed switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Current-peak  
Base Current  
VALUE  
-80  
UNIT  
V
-60  
V
-7  
V
-3  
A
ICM  
-6  
A
IB  
-1  
A
Collector Power Dissipation  
Ta=25℃  
1.5  
PC  
W
Collector Power Dissipation  
TC=25℃  
12.5  
150  
-65~150  
Junction Temperature  
Ti  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
10  
Rth j-c  
Thermal Resistance,Junction to Ambient  
83.4  
Rth j-a  
isc Websitewww.iscsemi.cn  

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