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MJE170STU PDF预览

MJE170STU

更新时间: 2024-11-28 20:08:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 48K
描述
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

MJE170STU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.84
最大集电极电流 (IC):3 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MJE170STU 数据手册

 浏览型号MJE170STU的Datasheet PDF文件第2页浏览型号MJE170STU的Datasheet PDF文件第3页浏览型号MJE170STU的Datasheet PDF文件第4页浏览型号MJE170STU的Datasheet PDF文件第5页 
MJE170/171/172  
Low Power Audio Amplifier  
Low Current, High Speed Switching Applications  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: MJE170  
: MJE171  
: MJE172  
- 60  
- 80  
- 100  
V
V
V
CBO  
: MJE170  
: MJE171  
: MJE172  
- 40  
- 60  
- 80  
V
V
V
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 7  
- 3  
V
A
I
I
I
C
- 6  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
12.5  
1.5  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max. Units  
BV  
Collector-Emitter Breaksown Voltage  
CEO  
: MJE170  
: MJE171  
: MJE172  
I
= 10mA, I = 0  
-40  
-60  
-80  
V
V
V
C
B
I
Collector Cut-off Current : MJE170  
V
V
V
V
V
V
= - 60V, I = 0  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
µA  
µA  
µA  
mA  
mA  
mA  
CBO  
CB  
CB  
CB  
CB  
CB  
CB  
B
: MJE171  
: MJE172  
: MJE170  
: MJE171  
: MJE172  
= - 80V, I = 0  
E
= - 100V, I = 0  
E
= - 60V, I = 0, @T = 150°C  
E
C
= - 80V, I = 0, @T = 150°C  
E
C
= - 100V, I = 0, @T = 150°C  
E
C
I
Emitter Cut-off Current  
DC Current Gain  
V
= - 7V, I = 0  
-0.1  
250  
µA  
EBO  
BE  
C
h
V
V
V
= - 1V, I = - 100mA  
50  
30  
12  
FE  
CE  
CE  
CE  
C
= - 1V, I = - 500mA  
C
= - 1V, I = - 1.5A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= - 500mA, I = - 50mA  
-0.3  
-0.9  
-1.7  
V
V
V
CE  
C
C
C
B
= - 1.5A, I = - 150mA  
B
= - 3A, I = - 600mA  
B
V
V
(sat)  
(on)  
I
I
= - 1.5A, I = - 150mA  
-1.5  
-2.0  
V
V
BE  
BE  
C
C
B
= - 3A, I = - 600mA  
B
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
V
V
= - 1V, I = - 500mA  
-1.2  
V
CE  
CE  
CB  
C
f
= - 10V, I = - 100mA  
50  
MHz  
pF  
T
C
C
= - 10V, I = 0, f = 0.1MHz  
E
50  
ob  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

MJE170STU 替代型号

型号 品牌 替代类型 描述 数据表
KSE170STU FAIRCHILD

完全替代

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
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