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MJD42CT4G PDF预览

MJD42CT4G

更新时间： 2024-02-09 00:07:09
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC
页数 文件大小 规格书
6页 79K
描述
Complementary Power Transistors

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中文翻译

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MJD42CT4G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：4 weeks风险等级：0.55
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：411925Samacsys Pin Count：3
Samacsys Part Category：Transistor BJT PNPSamacsys Package Category：Other
Samacsys Footprint Name：DPAK (SINGLE GAUGE) CASE 369C ISSUE F_2Samacsys Released Date：2019-11-13 13:59:25
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：6 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：15
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：3 MHz
Base Number Matches：1

MJD42CT4G 数据手册

 浏览型号MJD42CT4G的Datasheet PDF文件第2页浏览型号MJD42CT4G的Datasheet PDF文件第3页浏览型号MJD42CT4G的Datasheet PDF文件第4页浏览型号MJD42CT4G的Datasheet PDF文件第5页浏览型号MJD42CT4G的Datasheet PDF文件第6页 
MJD41C (NPN)  
MJD42C (PNP)  
Preferred Device  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
Features  
POWER TRANSISTORS  
6 AMPERES  
100 VOLTS, 20 WATTS  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
• Straight Lead Version in Plastic Sleeves (“1” Suffix)  
• Electrically Similar to Popular TIP41 and TIP42 Series  
MARKING  
DIAGRAMS  
• Monolithic Construction With Built−in Base − Emitter Resistors  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
YWW  
J4xCG  
2
1
• Pb−Free Packages are Available  
3
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
4
V
CEO  
YWW  
J4xCG  
V
CB  
EB  
V
1
2
DPAK−3  
CASE 369D  
STYLE 1  
I
6
10  
Collector Current − Continuous  
− Peak  
C
3
Base Current  
I
2
Adc  
B
P
P
20  
0.16  
W
W/°C  
Total Power Dissipation @ T = 25°C  
D
D
C
Y
= Year  
Derate above 25°C  
WW = Work Week  
J4xC = Device Code  
x = 1 or 2  
Total Power Dissipation (Note 1)  
W
W/°C  
°C  
1.75  
0.014  
@ T = 25°C  
A
G
= Pb−Free Package  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Preferred devices are recommended choices for future use  
and best overall value.  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 6  
MJD41C/D  
 
123456

中文翻译

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MJD42CT4G 替代型号

型号 品牌 替代类型 描述 数据表
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MJD42CG ONSEMI

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