5秒后页面跳转
MJ15021 PDF预览

MJ15021

更新时间: 2024-11-03 22:46:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
4页 138K
描述
4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS

MJ15021 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.45Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
基于收集器的最大容量:500 pF集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:150 W认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzVCEsat-Max:1 V
Base Number Matches:1

MJ15021 数据手册

 浏览型号MJ15021的Datasheet PDF文件第2页浏览型号MJ15021的Datasheet PDF文件第3页浏览型号MJ15021的Datasheet PDF文件第4页 
Order this document  
by MJ15018/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use as high frequency drivers in Audio Amplifiers.  
High Gain Complementary Silicon Power Transistors  
Safe Operating Area 100% Tested  
50 V, 3.0 A, 1.0 Sec.  
Excellent Frequency Response — f = 20 MHz min.  
T
*Motorola Preferred Device  
MAXIMUM RATINGS  
Rating  
4.0 AMPERES  
COMPLEMENTARY  
SILICON  
MJ15018  
MJ15019  
MJ15020  
MJ15021  
Symbol  
Unit  
POWER TRANSISTORS  
200 AND 250 VOLTS  
150 WATTS  
Collector–Emitter Voltage  
Collector–Base Voltage  
V
V
V
200  
200  
250  
250  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
CEO  
CBO  
EBO  
Emitter–Base Voltage  
7.0  
4.0  
2.0  
6.0  
Collector Current — Continuous  
Base Current — Continuous  
Emitter Current — Continuous  
I
C
I
B
I
E
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
150  
0.86  
Watts  
W/ C  
CASE 1–07  
TO–204AA  
(TO–3)  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +200  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.17  
C/W  
θJC  
100  
SECOND BREAKDOWN  
DERATING  
80  
60  
40  
20  
0
THERMAL DERATING  
0
25  
50  
75  
100  
125  
150  
C)  
175  
200  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

MJ15021 替代型号

型号 品牌 替代类型 描述 数据表
MJ15021G ONSEMI

功能相似

Complementary Silicon Power Transistors
MJ15021 ONSEMI

功能相似

Complementary Silicon Power Transistors
MJ15025 ONSEMI

功能相似

SILICON POWER TRANSISTORS

与MJ15021相关器件

型号 品牌 获取价格 描述 数据表
MJ15021G ONSEMI

获取价格

Complementary Silicon Power Transistors
MJ15022 Wing Shing

获取价格

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
MJ15022 ISC

获取价格

Silicon NPN Power Transistors
MJ15022 JMNIC

获取价格

Silicon NPN Power Transistors
MJ15022 MOSPEC

获取价格

POWER TRANSISTOR(16A,200-250V,250W)
MJ15022 MOTOROLA

获取价格

Silicon Power Transistors
MJ15022 ONSEMI

获取价格

SILICON POWER TRANSISTORS
MJ15022 NJSEMI

获取价格

Trans GP BJT NPN 200V 16A 3-Pin(2+Tab) TO-204 Tray
MJ-15022 NJSEMI

获取价格

NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS
MJ15022_06 ONSEMI

获取价格

Silicon Power Transistors