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MJ15023 PDF预览

MJ15023

更新时间: 2024-11-04 10:55:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 40K
描述
Silicon PNP Power Transistors

MJ15023 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:NBase Number Matches:1

MJ15023 数据手册

 浏览型号MJ15023的Datasheet PDF文件第2页浏览型号MJ15023的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
MJ15023 MJ15025  
DESCRIPTION  
·With TO-3 package  
·Complement to type MJ15022; MJ15024  
·Excellent safe operating area  
·High DC current gain  
hFE = 15 (Min) @ IC = 8 Adc  
APPLICATIONS  
·Designed for high power audio, disk head  
positioners and other linear applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-350  
-400  
-200  
-250  
--5  
UNIT  
MJ15023  
MJ15025  
MJ15023  
MJ15025  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
-16  
Collector current-peak  
Base current  
-30  
A
-5  
A
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
250  
W
150  
Tstg  
-65~200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
Rth j-c  
0.70  
/W  

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