Datasheet > MJ15024

MJ15024

更新时间： 2024-11-04 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	69K
描述
Silicon NPN Power Transistors

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MJ15024 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ15022 MJ15024

DESCRIPTION

·With TO-3 package

·Complement to type MJ15023; MJ15025

·Excellent safe operating area

·High DC current gain

h_FE= 15 (Min) @ I_C= 8 Adc

APPLICATIONS

·Designed for high power audio, disk head

positioners and other linear applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

350

400

200

250

UNIT

MJ15022

MJ15024

MJ15022

MJ15024

V_CBO

Collector-base voltage

Open emitter

Open base

V_CEO

Collector-emitter voltage

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_D

T_j

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

250

150

-65~200

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance junction to case

0.70

℃/W

12 3 4

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